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| absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -14 i d @ v gs = -12v, t c = 100c continuous drain current -9.0 i dm pulsed drain current -56 p d @ t c = 25c max. power dissipation 150 w linear derating factor 1.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current -14 a e ar repetitive avalanche energy 15 mj dv/dt peak diode recovery dv/dt -41 v/ns t j operating junction -55 to 150 t stg storage temperature range c lead temperature 300 ( 0.063 in.(1.6mm) from case for 10s) weight 9.3 (typical ) g pre-irradiation international rectifier?s rad-hard hexfet ? technology provides high performance power mosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. a radiation hardened power mosfet thru-hole (t0-254aa) www.irf.com 1 product summary part number radiation level r ds(on) i d qpl part number IRHM9250 100k rads (si) 0.315 ? -14a jansr2n7423 irhm93250 300k rads (si) 0.315 ? -14a jansf2n7423 for footnotes refer to the last page IRHM9250 jansr2n7423 200v, p-channel ref: mil-prf-19500/662 rad-hard ? hexfet ? technology to-254aa features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight esd rating: class 2 per mil-std-750, method 1020 pd-91299e
2 www.irf.com IRHM9250, jansr2n7423 pre-irradiation for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -14 i sm pulse source current (body diode) ? ? -56 v sd diode forward voltage ? ? -3.6 v t j = 25c, i s = -14a, v gs = 0v t rr reverse recovery time ? ? 775 ns t j = 25c, i f = -14a, di/dt -100a/ s q rr reverse recovery charge ? ? 7.2 c v dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.83 r thja junction-to-ambient ? ? 48 c/w typical socket mount r thcs case-to-sink ? 0.21 ? electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -200 ? ? v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.24 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.315 ? v gs = -12v, i d = -9.0a resistance ? ? 0.33 v gs = -12v, i d = -14a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 4.0 ? ? s v ds = -15v, i ds = -9.0a i dss zero gate voltage drain current ? ? -25 v ds = -160v ,v gs = 0v ? ? -250 v ds = -160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 200 v gs = -12v, i d = -14a q gs gate-to-source charge ? ? 45 nc v ds = -100v q gd gate-to-drain (?miller?) charge ? ? 85 t d (on) turn-on delay time ? ? 60 v dd = -100v, i d = -14a t r rise time ? ? 240 v gs = -12v, r g = 2.35 ? t d (off) turn-off delay time ? ? 225 t f fall time ? ? 220 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 4200 ? v gs = 0v, v ds = -25v c oss output capacitance ? 690 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 160 ? na nh ns a measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) note: corresponding spice and saber models are available on international rectifier web site. www.irf.com 3 pre-irradiation IRHM9250, jansr2n7423 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -200 ? -200 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds = -160v, v gs = 0v r ds(on) static drain-to-source ? 0.315 ? 0.315 ? v gs = -12v, i d = -9.0a on-state resistance (to-3) r ds(on) static drain-to-source ? 0.315 ? 0.315 ? v gs = -12v, i d = -9.0a on-state resistance (to-254aa) v sd diode forward voltage ? -3.6 ? -3.6 v v gs = 0v, i s = -14a international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. typical single event effect safe operating area -250 -200 -150 -100 -50 0 0 5 10 15 20 vgs vds cu br ! ! " # $ $ $ % &! ' ( " ") " $ $ ( $ * $% 2. irhm93250 (jansf2n7423) 1. IRHM9250 (jansr2n7423) 4 www.irf.com IRHM9250, jansr2n7423 pre-irradiation 10 100 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 5 6 7 8 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -14a 12v www.irf.com 5 pre-irradiation IRHM9250, jansr2n7423 ! ! " " " #$ 1 10 100 0 2000 4000 6000 8000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 0 50 100 150 200 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -14 a v = 40v ds v = 100v ds v = 160v ds 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc 6 www.irf.com IRHM9250, jansr2n7423 pre-irradiation $ $ %& 1 0.1 % ' & ( )* " v gs 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds 90% 10% v gs t d(on) t r t d(off) t f + - www.irf.com 7 pre-irradiation IRHM9250, jansr2n7423 q g q gs q gd v g charge +, ! -! %& & ' " . ( & %& . ( & 25 50 75 100 125 150 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -6.3a -8.9a -14a d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v v gs 8 www.irf.com IRHM9250, jansr2n7423 pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -50v, starting t j = 25c, l =5.1mh peak i l = -14a, v gs =-12v i sd -14a, di/dt -600a/ s, v dd -200v, t j 150c footnotes: case outline and dimensions ? to-254aa ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2014 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. |
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